Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs
نویسندگان
چکیده
منابع مشابه
Lifetime improvement of NAND flash-based storage systems using dynamic program and erase scaling
The cost-per-bit of NAND flash memory has been continuously improved by semiconductor process scaling and multi-leveling technologies (e.g., a 10 nm-node TLC device). However, the decreasing lifetime of NAND flash memory as a side effect of recent advanced technologies is regarded as a main barrier for a wide adoption of NAND flash-based storage systems. In this paper, we propose a new system-l...
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ژورنال
عنوان ژورنال: VLSI Design
سال: 2001
ISSN: 1065-514X,1563-5171
DOI: 10.1155/2001/62583